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4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 10, 2018-05-19 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! -10 0 10 20 20 24 28 32 rn loss (db) g ain (db) broadband performance v dd = 28 v, i dq1 = 80 ma, i dq2 = 160 ma fixture tuned for 2110 - 2170 mhz gain -30 -20 12 16 1500 1700 1900 2100 2300 2500 retu g frequency (mhz) return loss rf characteristics two-carrier wcdma specifcations (not subject to production testverifed by design/characterization in wolfspeed test fxture) v ds = 28 v, i dq1 = 80 ma, i dq2 = 160 ma, ? = 2110 C 2170 mhz, p out = 7 w average characteristic symbol min typ max unit gain g ps 28.5 db power added effciency pae 33 % input return loss irl C14 db adjacent channel power ratio acpr C36 dbc third order intermodulation distortion imd3 C32 dbc spurs load 3:1 C60 dbc gain flatness d g 0.43 db wideband rf ldmos integrated power amplifer 15 w, 28 v, 1800 C 2200 mhz description the PTMA210152M is a wideband, matched, 15-watt, 2-stage ldmos integrated amplifer intended for wideband driver applications in the 1800 to 2200 mhz band. this device is offered in a 20-lead thermally- enhanced overmolded package for cool and reliable operation. PTMA210152M package pg-dso-20-63 features ? designed for wide rf bandwidth and low memory effects ? broadband input on-chip matching ? typical two-carrier wcdma performance at 2140 mhz, 28 v, 7 w avg. - gain = 28.5 db - power added effciency = 33 % - imd3 = C32 dbc ? typical cw performance at 2140 mhz, 28 v - output power at p 1db ~ 20 w - effciency > 49% ? integrated esd protection. meets hbm class 1b (minimum), per jesd22-a114f. ? capable of handling 10:1 vswr @ 28 v, 15 w (cw) output power ? thermally-enhanced rohs-compliant package PTMA210152M
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 10, 2018-05-19 2 PTMA210152M rf characteristics (cont.) two-tone measurement (tested in wolfspeed test fxture) v dd = 28 v, i dq1 = 80 ma, i dq2 = 160 ma, p out = 8 w avg, ? = 2140 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 27.5 28.5 30 db drain effciency h d 33 34 % third order intermodulation distortion imd3 C33 C31 dbc input return loss irl C14 C10 db dc characteristics stage 1 characteristic conditions symbol min typ max unit drain leakage current v ds = 28 v, v gs = 0 v i dss 1.0 a v ds = 63 v, v gs = 0 v i dss 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 3.5 w operating gate voltage v ds = 28 v, i dq = 80 ma v gs 2 2.5 3 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a stage 2 characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1.0 a v ds = 63 v, v gs = 0 v i dss 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.6 w operating gate voltage v ds = 28 v, i dq = 160 ma v gs 2 2.5 3 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 10, 2018-05-19 3 PTMA210152M maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C0.5 to +12 v junction temperature t j 200 c input power p in 15 dbm total device dissipation p d 70 w above 25c derate by 0.4 w/c storage temperature range t stg C40 to +150 c thermal resistance (t case = 70c, 15 w cw) stage 1 r q jc 10.7 c/w stage 2 r q jc 2.9 c/w moisture sensitivity level level test standard package temperature unit 3 ipc/jedec j-std-020 260 c ordering information type and version order code package and description shipping PTMA210152M v1 r500 PTMA210152M-v1-r500 pg-dso-20-63, molded plastic tape & reel, 500 pcs
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 10, 2018-05-19 4 PTMA210152M typical performance, circuit tuned for 2140 mhz (data taken in a production test fixture) -45 -40 -35 -30 -25 25 30 35 40 45 d 3 (dbc) two-carrier wcdma performance v dd = 28 v, i dq1 = 80 ma, i dq2 = 160 ma, series show 2110, 2140, 2170 mhz imd3 d ed efficiency (%) 2110 mhz 2140 mhz 2170 mhz -60 -55 -50 10 15 20 30 32 34 36 38 40 42 im d output power (dbm) pae imd3 power ad d 25 35 45 55 24 26 28 30 g ain (db) cw performance v dd = 28 v, i dq1 = 80 ma, i dq2 = 160 ma for 2110, 2140, 2170 mhz gain 2110 mhz 2140 mhz 2170 mhz d ed efficiency (%) 5 15 20 22 29 31 33 35 37 39 41 43 45 g output power (dbm) pae power ad d - 45 -35 -25 -15 -5 5 20 25 30 35 40 45 m d3 (dbc) two-tone drive-up v dd = 28 v, i dq1 = 80 ma, i dq2 = 160 ma for 2110, 2140, 2170 mhz pae imd3 d ed efficiency (%) 2110 mhz 2140 mhz 2170 mhz -75 -65 -55 - 45 5 10 15 20 30 32 34 36 38 40 42 44 i m output power, avg. ( dbm ) power ad d -45 -40 -35 -30 -25 25 30 35 40 45 pr (dbc) wcdma performance v dd = 28 v, i dq1 = 80 ma, i dq2 = 160 ma, series show 2110, 2140, 2170 mhz acpr d ed efficiency (%) 2110 mhz 2140 mhz 2170 mhz -60 -55 -50 10 15 20 30 32 34 36 38 40 ac output power (dbm) pae power ad d
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 10, 2018-05-19 5 PTMA210152M typical performance2140 mhz (cont.) -45 -40 -35 -30 -25 25 30 35 40 45 c pr (dbc) two-carrier wcdma performance v dd = 28 v, i dq1 = 80 ma, i dq2 = 160 ma, series show 2110, 2140, 2170 mhz acpr d ded efficiency (%) 2110 mhz 2140 mhz 2170 mhz -60 -55 -50 10 15 20 30 32 34 36 38 40 42 a c output power (dbm) pae power a d -45 -40 -35 -30 -25 25 30 35 40 45 c pr (dbc) two-carrier wcdma performance v dd = 28 v, i dq1 = 80 ma, i dq2 = 160 ma, ? = 2140 mhz acpr d ed efficiency (%) C 25 c 25 c 90 c -60 -55 -50 10 15 20 30 32 34 36 38 40 42 a c output power (dbm) pae power ad d -45 -40 -35 -30 -25 25 30 35 40 45 six-carrier td-scdma performance v dd = 28 v, i dq1 = 80 ma, i dq2 = 160 ma acpr d ed efficiency (%) c pr (dbc) -60 -55 -50 10 15 20 30 32 34 36 38 40 42 output power (dbm) pae power ad d a c 2110 mhz 2140 mhz 2170 mhz
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 10, 2018-05-19 6 PTMA210152M broadband circuit impedance2140 mhz frequency z load w mhz r jx 2110 1.89 C5.84 2114 1.87 C5.80 2118 1.85 C5.76 2122 1.84 C5.72 2126 1.82 C5.67 2130 1.80 C5.63 2134 1.78 C5.60 2138 1.77 C5.55 2142 1.75 C5.51 2146 1.73 C5.47 2150 1.71 C5.42 2154 1.70 C5.38 2158 1.68 C5.34 2162 1.66 C5.30 2166 1.65 C5.25 2170 1.63 C5.21 see next page for reference circuit information 0.1 0.3 0.5 0.2 0.4 0 . 1 0 . 3 0 . 5 0 . 7 0 . 9 0 . 2 0 . 4 0 . 6 0 . 8 0 . 1 0 . 3 0 . 5 0 . 7 0 . 9 0 . 2 0 . 4 0 . 6 0 . 8 1 - w a v e l e n g t h s t o w a r d g e n e r a t o r - - - > 0 . 0 5 0 . 4 0 0 . 4 5 0 . 0 5 0 . 1 0 0 . 4 5 < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 o rnalized to 50 ohms a 210152m 2170 mhz 2110 mhz 2 10152m july 9, 2009 11:52:37 am z load z 0 = 50 w z load d s in
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 10, 2018-05-19 7 PTMA210152M reference circuittuned for 2140 mhz reference circuit schematic for ? = 2140 mhz circuit assembly information dut PTMA210152M, ldmos ic reference fixture part no. ltn/PTMA210152M pcb rogers ro4350: 0.76 mm [.030"] thick, e r = 3.48, 1 oz. copper find gerber fles for this reference fxture on the wolfspeed web site at ( www.wolfspeed.com/rf ) microstrip electrical characteristics dimensions: l x w (mm) dimensions: l x w (in.) at 2140 mhz l1 0.206 , 50 w 17.48 x 1.70 0.688 x 0.067 l2 0.111 , 50 w 9.40 x 1.70 0.370 x 0.067 l3 0.052 , 11 w * 4.09 x 12.83 0.161 x 0.505 l4 0.301 , 61 w 25.91 x 1.19 1.020 x 0.047 l5 0.004 , 71 w 0.38 x 0.89 0.015 x 0.035 l6 0.004 , 71 w 0.38 x 0.89 0.015 x 0.035 l7 0.090 , 34 w 7.47 x 3.00 0.294 x 0.118 l8 0.243 , 44 w 20.40 x 2.11 0.803 x 0.083 l9 0.058 , 50 w 4.95 x 1.70 0.195 x 0.067 *calculated at 10.5 a 2 1 0 1 5 2 m _ b d _ 7 - 2 3 - 0 9 j 2 j 1 c 18 10 f c 16 0 . 1 f c 15 12 pf c 17 1 f c 19 100 f 50 v v d 2 ? 3 ? 4 c 22 12 pf ? 7 ? 8 ? 9 ptma 210152 m 5 16 10 9 7 8 6 11 12 13 14 15 dut 1 3 4 2 17 18 19 20 c 14 12 pf c 10 12 pf c 12 1 f c 8 1 f c 7 10 f c 11 10 f c 9 0 . 1 f c 13 0 . 1 f ? 1 v d 1 c 1 100 f 50 v c 2 10 f c 3 1 f c 6 0 . 5 pf ? 2 c 4 0 . 1 f c 5 12 pf r 1 0 q 1 v g 1 r 3 r 2 0 q 2 r 4 g 2 v c 20 2 . 2 pf c 21 1 . 0 pf ? 5 ? 6 ? ?
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 10, 2018-05-19 8 PTMA210152M reference circuit2140 mhz (cont.) component description suggested manufacturer p/n or comment c3, c8, c12, c17 ceramic capacitor, 1 f digi-key 445-1411-2-nd c4, c9, c13, c16 capacitor, 0.1 f digi-key pcc104bct-nd c2, c7, c11, c18 tantalum capacitor, 10 f, 50 v digi-key p5571-nd c1, c19 electrolytic capacitor, 100 f, 50 v digi-key pce3718ct-nd c6 ceramic capacitor, 0.5 pf atc 600s 0r5 ct c20 ceramic capacitor, 2.2 pf atc 600s 2r2 ct c21 ceramic capacitor, 1.0 pf atc 600s 1r0 ct c5, c10, c14, c15, c22 ceramic capacitor, 12 pf atc 600s 120 jt q1, q2 transistor infneon technologies bcp56 r1, r2 chip resistor, 0 ohms digi-key p00ect-nd r3, r4 potentiometer, 2 k ohms digi-key 3224w-202etr-nd reference circuit assembly diagram (not to scale) a 210152 m _ cd _ 7 - 23 - 09 rf _ in rf _ out v d 1 v g 2 c 2 c 3 c 4 c 5 c 6 c 7 c 8 c 9 c 10 c 14 c 17 c 18 c 22 r 2 r 1 q 2 c 21 c 20 r 3 r 4 q 1 c 11 c 12 c 13 c 15 c 16 v g 1 c 1 v d 2 c 19 ptma 210152 m PTMA210152M_03a_cus
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 10, 2018-05-19 9 PTMA210152M typical performance, circuit tuned for 1840 mhz (data taken in a production test fixture) 35 40 45 50 55 60 65 20 22 24 26 28 30 32 a in (db) cw performance v dd = 28 v, i dq1 = 70 ma, i dq2 = 120 ma, ? = 1805, 1830, 1880 mhz gain d ed efficiency (%) pae d ed efficiency (%) 1805 mhz 1830 mhz 1880 mhz 10 15 20 25 30 10 12 14 16 18 29 31 33 35 37 39 41 43 45 g a output power (dbm) power ad d power ad d -40 -30 -20 -10 20 30 40 50 m d3 (dbc) two-tone drive-up v dd = 28 v, i dq1 = 70 ma, i dq2 = 120 ma, ? = 1805, 1830, 1880 mhz pae imd3 d ed efficiency (%) 1805 mhz 1830 mhz 1880 mhz -60 -50 0 10 29 31 33 35 37 39 41 43 i m output power, avg. (dbm) power ad d -65 -55 -45 -35 20 30 40 50 n spectrum (dbc) edge modulation spectrum performance v dd = 28 v, i dq1 = 70 ma, i dq2 = 160 ma, series are at selected frequencies pae 400 khz d ed efficiency (%) 1805.2 mhz 1836.6 mhz 1879.8 mhz -85 -75 0 10 30 32 34 36 38 40 42 modulatio n output power (dbm) 600 khz power ad d 4 6 8 10 20 30 40 50 o r magnitude (%) edge - evm v dd = 28 v, i dq1 = 70 ma, i dq2 = 160 ma, series are at selected frequencies evm pae d ded efficiency (%) 1805.2 mhz 1836.6 mhz 1879.8 mhz 0 2 0 10 30 31 32 33 34 35 36 37 38 39 40 41 42 error vect o output power (dbm) pae power a d
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 10, 2018-05-19 10 PTMA210152M broadband circuit impedance1840 mhz frequency z load w mhz r jx 1800 4.34 C7.66 1810 4.28 C7.57 1820 4.21 C7.48 1830 4.15 C7.40 1840 4.09 C7.30 1850 4.03 C7.21 1860 3.96 C7.12 1870 3.90 C7.03 1880 3.85 C6.94 1890 3.79 C6.85 1900 3.73 C6.76 1910 3.67 C6.67 1920 3.62 C6.57 1930 3.56 C6.48 1940 3.50 C6.39 1950 3.45 C6.30 1960 3.40 C6.21 1970 3.34 C6.11 1980 3.29 C6.02 1990 3.24 C5.93 2000 3.19 C5.84 0.1 0.3 0.5 0.2 0.4 2 0 . 1 0 . 3 0 . 5 0 . 7 0 . 9 0 . 2 0 . 4 0 . 6 0 . 8 0 . 1 0 . 3 0 . 5 0 . 7 0 . 9 0 . 2 0 . 4 0 . 6 0 . 8 1 - w a v e l e n g t h s t o w a r d g e n e r a t o r - - - > 0 . 0 5 0 . 3 5 0 . 4 0 0 . 4 5 0 . 0 5 0 . 1 0 0 . 1 5 0 . 4 5 < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 nornalized to 50 ohms a210152m for 1800 mhz 1900 mhz 1800 mhz 2000 mhz da210152m18 july 22, 2009 12:17:35 pm z load z source 2020 mhz 1800 4.34 - 7 1810 4.28 - 7 1820 4.21 - 7 1830 4.15 - 7 1840 4.09 - 7 1850 4.03 - 7 1860 3.96 - 7 1870 3.90 - 7 1880 3.85 - 6 1890 3.79 - 6 1900 3.73 - 6 1910 3.67 - 6 1920 3.62 - 6 1930 3.56 - 6 1940 3.50 - 6 1950 3.45 - 6 1960 3.40 - 6 1970 3.34 - 6 1980 3.29 - 6 1990 3.24 - 5 2000 3.19 - 5 z load d s in z 0 = 50 w
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 10, 2018-05-19 11 PTMA210152M reference circuit, tuned for 1840 mhz reference circuit schematic for ? = 1840 mhz circuit assembly information dut PTMA210152M, ldmos ic test fixture part no. ltn/PTMA210152MC18 pcb rogers ro4350: 0.76 mm [.030"] thick, e r = 3.48, 1 oz. copper fnd gerber fles for this test fxture on the wolfspeed web site at ( www.wolfspeed.com/rf ) microstrip electrical characteristics dimensions: l x w (mm) dimensions: l x w (in.) at 1840 mhz l1 0.077 , 50 w 7.59 x 1.70 0.299 x 0.067 l2 0.250 , 50 w 24.66 x 1.70 0.971 x 0.067 l3 0.045 , 11 w* 4.09 x 12.83 0.161 x 0.505 l4 0.259 , 61 w 25.91 x 1.19 1.020 x 0.047 l5 0.004 , 71 w 0.38 x 0.89 0.015 x 0.035 l6 0.018 , 44 w 1.73 x 2.08 0.068 x 0.082 l7 0.268 , 44 w 26.16 x 2.08 1.030 x 0.082 l8 0.050 , 50 w 4.95 x 1.70 0.195 x 0.067 *calculated at 10.5 a 2 1 0 1 5 2 m _ b d _ 7 - 2 3 - 0 9 j 1 c 18 1 f c 16 0 . 1 f c 15 12 pf c 17 10 f c 19 100 f 50 v v d 2 ? 3 ? 4 c 22 12 pf c 21 3 . 3 pf ? 7 ? 8 ptma 210152 m 5 16 10 9 7 8 6 11 12 13 14 15 dut 1 3 4 2 17 18 19 20 c 14 12 pf c 10 12 pf c 12 10 f c 8 10 f c 7 1 f c 11 1 f c 9 0 . 1 f c 13 0 . 1 f ? 1 v d 1 c 1 100 f 50 v c 2 1 f c 3 10 f c 6 1 pf ? 2 c 4 0 . 1 f c 5 12 pf r 1 0 q 1 v g 1 r 3 r 2 0 q 2 r 4 g 2 v c 20 1 . 2 pf ? 5 ? ? l 1 2 . 7 nh ? 6
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 10, 2018-05-19 12 PTMA210152M reference circuit1840 mhz (cont.) reference circuit assembly diagram (not to scale) component description suggested manufacturer p/n or comment c3, c8, c12, c17 ceramic capacitor, 1 f digi-key 445-1411-2-nd c4, c9, c13, c16 capacitor, 0.1 f digi-key pcc104bct-nd c2, c7, c11, c18 tantalum capacitor, 10 f, 50 v digi-key p5571-nd c1, c19 electrolytic capacitor, 100 f, 50 v digi-key pce3718ct-nd c6 ceramic capacitor, 1.0 pf atc 600s 1r0 ct c20 ceramic capacitor, 1.2 pf atc 600s 1r2 ct c21 ceramic capacitor, 3.3 pf atc 600s 3r3 ct c5, c10, c14, c15, c22 ceramic capacitor, 12 pf atc 600s 120 jt q1, q2 transistor infneon technologies bcp56 r1, r2 chip resistor, 0 ohms digi-key p00ect-nd r3, r4 potentiometer, 2 k ohms digi-key 3224w-202etr-nd l1 inductor, 2.7 nh digi-key pcd1287ct-nd a 210152 m _ cd _ 7 - 23 - 09 rf _ in rf _ out v d 1 v g 2 c 2 c 3 c 4 c 5 c 6 c 7 c 8 c 9 c 10 c 14 c 17 c 18 c 22 r 2 r 1 q 2 c 21 c 20 r 3 r 4 q 1 c 11 c 12 c 13 c 15 c 16 v g 1 c 1 v d 2 c 19 ptma 210152 m l 1 PTMA210152M_03a_cus
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 10, 2018-05-19 13 PTMA210152M pinout diagram (top view) source/ground: plated copper heatslug on backside of package 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 a 2 1 0 1 5 2 m - v 1 _ p d _ 0 9 - 0 2 - 2 0 0 9 nc nc nc nc rf in rf in nc nc nc nc nc v dd 1 v g1 v g2 v dd 2 rf out v dd 2 rf out v dd 2 rf out v dd 2 rf out v dd 2 rf out v dd 2 rf out
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 10, 2018-05-19 14 PTMA210152M package outline specifications package pg-dso-20-63 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. package dimensions: 11.0 mm by 15.9 mm by 3.35 mm. 3. jedec drawing number: mo-166. 4. does not include plastic or metal protrusion of 0.15 mm max per side. 5. does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. bottom metallization. 7. sn plating (matte): 5 C 15 micron [196.85 C 590.55 microinch]. 2 x 2.90 [0. 114 ] max (2 pls) 13. 00 [0. 512 ] max 1 10 11 20 6 . index pin 1 6 . 14 . 20 0.30 11 . 00 [0 . 433 ] 9 x 1 .27 = 11.43 9 x .050 = . 450 1 . 10 [0. 043 ] max (2 pls) 2 . 95 [0. 116 ] 6. 00 [0. 236 ] top view bottom view [0. 559 0. 012 ] 0. 40+0 . 13 [0. 015 + 0. 005 ] 0 .25mm c a b 15. 900.10 [0. 626 0. 004 ] 1. 27 [0 . 050 ] 141 ( 2 pls) top / bottom all sides 11 . 00 0. 10 [0. 433 0. 004 ] 5 . 3. 50 [0. 137 ] max see detail a 4. side view end view m s s 0 . 95 0. 15 [0. 037 0.006 ] 0. 35 [0. 014 ] gauge plane 0. 15 [0. 006 ] ref 0+ 0. 1 [0 +0.004 ] standoff 1. 60 [0. 063 ] ref 0. 25 + 0 .07 C0 .02 [0. 010 ] + 0 .003 C0 .001 detail a pg - dso - 20 - 63 _ po _01 _12 - 07 - 2012 diagram notesCunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. package dimensions: 11.0 mm by 15.9 mm by 3.35 mm. 3. jedec drawing number : mo-166. 4. does not include plastic or metal protrusion of 0.15 mm max per side. 5. does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. bottom metallization. 7. sn plating (matte) : 5 - 15 micron [196.85 C 590.55 microinch].
www.wolfspeed.com rev. 10, 2018-05-19 notes disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or pat - ent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in diferent applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. copyright ? 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. wolfspeed? and the wolfspeed logo are trademarks of cree, inc. for more information, please contact: 4600 silicon drive durham, north carolina, usa 27703 www.wolfspeed.com/rf sales contact rfsales@wolfspeed.com rf product marketing contact rfmarketing@wolfspeed.com 919.407.7816 15 PTMA210152M 01 2009-06-15 preliminary all preliminary specifcation for new product in development. 02 2009-08-11 production all add 1840 mhz characterization. 03 2009-09-02 production 14 update pinout diagram. 04 2010-04-16 production 3; 14 add moisture sensitivity information; update package outline notes. 05 2010-10-28 production 6, 11 recalculate electrical characteristics. 06 2011-04-25 production 4, 6 removed graphs. 07 2011-06-10 production 2 clarify dc characteristics per stage 08 2011-06-11 production 2 revise rf table to better refect test specifcations. 09 2014-05-07 production 3 add shipping option. 10 2018-05-19 production all converted to wolfspeed data sheet revision history

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